DocumentCode :
598747
Title :
DRAM operating states and burn in
Author :
Ellis, W. ; Yip, G. ; Hong, Jonggi
Author_Institution :
Rambus Inc., Sunnyvale, CA, USA
fYear :
2012
fDate :
14-18 Oct. 2012
Firstpage :
144
Lastpage :
146
Abstract :
Observation of system level DRAM operations can provide insights for developing improved reliability screens such as burn-in. We instrumented a dual rank 4GB RDIMM to probe command bus traffic from the memory controller to the DRAMs on a server mother board. Internal DRAM operating states are derived by analyzing the command bus traffic. Analysis showed that when the controller uses an open page policy with bank interleaving, the active idle state can become the dominant bias configuration in activated arrays. This result can be applied to the development of an efficient burn in stress.
Keywords :
DRAM chips; traffic; dominant bias configuration; dual rank 4GB RDIMM; memory controller; probe command bus traffic; reliability screens; system level DRAM operations; Clocks; Instruments; Junctions; Random access memory; Streaming media; Stress; Timing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report (IRW), 2012 IEEE International
Conference_Location :
South Lake Tahoe, CA
ISSN :
1930-8841
Print_ISBN :
978-1-4673-2749-7
Type :
conf
DOI :
10.1109/IIRW.2012.6468941
Filename :
6468941
Link To Document :
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