Title :
Noise coupling analysis between TSV and active circuit
Author :
Manho Lee ; Jonghyun Cho ; Joungho Kim
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea
Abstract :
This paper investigates about the noise coupling between signal TSV and active circuit in frequency domain using 3D EM solver. Because the active circuits and TSV are generally surrounded by deep N-well and substrate ties, some parameters related to dimension parameters of those are varied to clarify the tendency, and the results are explained qualitatively. After that, using S-parameter, simple MOS application is simulated in time domain simulation.
Keywords :
S-parameters; active networks; frequency-domain analysis; three-dimensional integrated circuits; time-domain analysis; 3D EM solver; MOS application; S-parameter; active circuit; deep N-well; dimension parameters; frequency domain; noise coupling analysis; signal TSV; substrate ties; time domain simulation; Active circuits; Capacitance; Couplings; Noise; Substrates; Through-silicon vias; Time domain analysis;
Conference_Titel :
Electrical Design of Advanced Packaging and Systems Symposium (EDAPS), 2012 IEEE
Conference_Location :
Taipei
Print_ISBN :
978-1-4673-1444-2
Electronic_ISBN :
978-1-4673-1445-9
DOI :
10.1109/EDAPS.2012.6469428
