DocumentCode
599503
Title
The thermal effect on the output conductance in AlGaN/GaN HEMT´s
Author
Bellakhdar, A. ; Telia, A. ; Semra, Lemia ; Soltani, Ali
Author_Institution
Laboratoire des Microsystèmes et Instrumentation (LMI), Département d´Electronique Faculté des Sciences de l´Ingénieur, Université Mentourim Constantine, Algeria
fYear
2012
fDate
16-20 Dec. 2012
Firstpage
1
Lastpage
4
Abstract
The aim of this work is to study the potential offered by microwave power in the device AlGaN/GaN HEMT by studying the thermal effect and self heating on the output conductance taking into account the effects of spontaneous and piezoelectric polarization.
Keywords
AlGaN/GaN; GaN; HEMT; drain conductance; self heating;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics (ICM), 2012 24th International Conference on
Conference_Location
Algiers, Algeria
Print_ISBN
978-1-4673-5289-5
Type
conf
DOI
10.1109/ICM.2012.6471365
Filename
6471365
Link To Document