Title :
Influence of vertical scaling and temperature on impact-ionization effects in SiGe HBTs
Author :
Sasso, Grazia ; d´Alessandro, Vincenzo ; Costagliola, Maurizio ; Rinaldi, Niccolo
Author_Institution :
Department of Biomedical, Electronics and Telecommunications Engineering, University of Naples Federico II, via Claudio 21, 80125, Italy
Abstract :
The temperature influence on impact-ionization mechanisms in advanced silicon-germanium heterojunction bipolar transistors is analyzed over the temperature range from 300 to 380 K for different technological nodes. Accurate results are obtained by performing simulations through a deterministic solver of the Boltzmann Transport Equation based on the spherical harmonics expansion of the distribution function. In particular, the impact of vertical scaling and lattice temperature on the open-base breakdown voltage BVCEO and the BVCEO×fT,PEAK product is investigated.
Keywords :
Boltzmann Transport Equation (BTE); Safe Operating Area (SOA); hydrodynamic (HD) models; impact ionization; lattice temperature; scaling; silicon germanium heterojunction bipolar transistors (SiGe HBTs);
Conference_Titel :
Microelectronics (ICM), 2012 24th International Conference on
Conference_Location :
Algiers, Algeria
Print_ISBN :
978-1-4673-5289-5
DOI :
10.1109/ICM.2012.6471370
