• DocumentCode
    599507
  • Title

    Influence of vertical scaling and temperature on impact-ionization effects in SiGe HBTs

  • Author

    Sasso, Grazia ; d´Alessandro, Vincenzo ; Costagliola, Maurizio ; Rinaldi, Niccolo

  • Author_Institution
    Department of Biomedical, Electronics and Telecommunications Engineering, University of Naples Federico II, via Claudio 21, 80125, Italy
  • fYear
    2012
  • fDate
    16-20 Dec. 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The temperature influence on impact-ionization mechanisms in advanced silicon-germanium heterojunction bipolar transistors is analyzed over the temperature range from 300 to 380 K for different technological nodes. Accurate results are obtained by performing simulations through a deterministic solver of the Boltzmann Transport Equation based on the spherical harmonics expansion of the distribution function. In particular, the impact of vertical scaling and lattice temperature on the open-base breakdown voltage BVCEO and the BVCEO×fT,PEAK product is investigated.
  • Keywords
    Boltzmann Transport Equation (BTE); Safe Operating Area (SOA); hydrodynamic (HD) models; impact ionization; lattice temperature; scaling; silicon germanium heterojunction bipolar transistors (SiGe HBTs);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics (ICM), 2012 24th International Conference on
  • Conference_Location
    Algiers, Algeria
  • Print_ISBN
    978-1-4673-5289-5
  • Type

    conf

  • DOI
    10.1109/ICM.2012.6471370
  • Filename
    6471370
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=599507