Compact modeling of long channel Double Gate MOSFET transistor

In this work, we present a compact modeling of long channel Double Gate MOSFET transistor with an efficient procedure to compute the mobile charge density for this model. In the first time, the static behavior of the symmetrical DG MOSFET is obtained using a relationship between charges and voltages. The model is based on the formalism EKV developed for the MOSFET bulk. In second time, to define the explicit solution of the gate charge density in weak and strong inversion, we use the Taylor series development. From that, we get an efficient algorithm that computes the gate/mobile charge density of the model with a faster computation time and without any iterative calculation. Our results are compared with the iterative calculation using the Newton-Raphson method, especially compared with 2-D numerical simulations using ATLAS-TCAD software.