Title :
The electro-thermal sub circuit model for power MOSFETs
Author :
Lotfi, Messaadi ; Toufik, Smail
Author_Institution :
Department of Electronics, University of Batna, Advanced Electronic Laboratory (LEA), Rue Mohammed Elhadi Boukhlouf 05000, Algeria
Abstract :
An empirical self-heating SPICE MOSFET model which accurately portrays the vertical DMOS power MOSFET electrical and thermal responses is presented. This macro-model implementation is the culmination of years of evolution in MOSFET modeling. This new version brings together the thermal and the electrical models of a VDMOS MOSFET. The existing electrical model [2], [3] is highly accurate and is recognized in the industry. The sequence of the model calibration procedure using parametric data is described. Simulation response of the new self-heating MOSFET model track the dynamic thermal response and is independent of SPICE´s global temperature definition.
Keywords :
Device characterization; MOS device; Spice; device modeling; high power discrete devices; modeling; power semiconductor devices; semiconductor devices; simulation; thermal design;
Conference_Titel :
Microelectronics (ICM), 2012 24th International Conference on
Conference_Location :
Algiers, Algeria
Print_ISBN :
978-1-4673-5289-5
DOI :
10.1109/ICM.2012.6471384
