• DocumentCode
    599521
  • Title

    The electro-thermal sub circuit model for power MOSFETs

  • Author

    Lotfi, Messaadi ; Toufik, Smail

  • Author_Institution
    Department of Electronics, University of Batna, Advanced Electronic Laboratory (LEA), Rue Mohammed Elhadi Boukhlouf 05000, Algeria
  • fYear
    2012
  • fDate
    16-20 Dec. 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    An empirical self-heating SPICE MOSFET model which accurately portrays the vertical DMOS power MOSFET electrical and thermal responses is presented. This macro-model implementation is the culmination of years of evolution in MOSFET modeling. This new version brings together the thermal and the electrical models of a VDMOS MOSFET. The existing electrical model [2], [3] is highly accurate and is recognized in the industry. The sequence of the model calibration procedure using parametric data is described. Simulation response of the new self-heating MOSFET model track the dynamic thermal response and is independent of SPICE´s global temperature definition.
  • Keywords
    Device characterization; MOS device; Spice; device modeling; high power discrete devices; modeling; power semiconductor devices; semiconductor devices; simulation; thermal design;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics (ICM), 2012 24th International Conference on
  • Conference_Location
    Algiers, Algeria
  • Print_ISBN
    978-1-4673-5289-5
  • Type

    conf

  • DOI
    10.1109/ICM.2012.6471384
  • Filename
    6471384