DocumentCode
599521
Title
The electro-thermal sub circuit model for power MOSFETs
Author
Lotfi, Messaadi ; Toufik, Smail
Author_Institution
Department of Electronics, University of Batna, Advanced Electronic Laboratory (LEA), Rue Mohammed Elhadi Boukhlouf 05000, Algeria
fYear
2012
fDate
16-20 Dec. 2012
Firstpage
1
Lastpage
4
Abstract
An empirical self-heating SPICE MOSFET model which accurately portrays the vertical DMOS power MOSFET electrical and thermal responses is presented. This macro-model implementation is the culmination of years of evolution in MOSFET modeling. This new version brings together the thermal and the electrical models of a VDMOS MOSFET. The existing electrical model [2], [3] is highly accurate and is recognized in the industry. The sequence of the model calibration procedure using parametric data is described. Simulation response of the new self-heating MOSFET model track the dynamic thermal response and is independent of SPICE´s global temperature definition.
Keywords
Device characterization; MOS device; Spice; device modeling; high power discrete devices; modeling; power semiconductor devices; semiconductor devices; simulation; thermal design;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics (ICM), 2012 24th International Conference on
Conference_Location
Algiers, Algeria
Print_ISBN
978-1-4673-5289-5
Type
conf
DOI
10.1109/ICM.2012.6471384
Filename
6471384
Link To Document