A new eye on NBTI-induced traps up to device lifetime using on the fly oxide trap method

In this work, we present a novel methodology to independently extract the interface-trap and border-trap generated by negative bias temperature instability (NBTI). It is mainly based on charge pumping technique (CP) at low and high frequencies. We emphasize on the easy-use of this approach and demonstrating its viability to characterize the NBTI. Using alternatively on the fly high and low frequencies CP measurements, it can separate the interface-traps and border-trap (switching oxide-trap) densities as well as their contributions to the threshold voltage shift in the same timeframe, without needing additional methods. The results show a power-law time-dependence of interface- and border-trap with an average exponent n of 0.16 and 0.07, respectively. In addition, it allows device lifetime projection at working conditions.