Numerical modeling of MOS transistor using implicit finite different-time domain method

In this work, we present a numerical modeling for a MOS transistor device. This motivated the present comprehensive study of its operations by accurate 2-D numerical simulations. All simulations codes are implemented using MATLAB code simulator. The numerical model is based on a finite-difference approximation of drift-diffusion model (DDM), which contains the Poisson equation and the carrier transport equations. The proposed algorithm provides the time and space distribution of the unknown functions electrostatic potential, carriers´ concentration, current density for the MOS transistor. Finally, the obtained results are presented and show a good agreement with numerical simulations using finite element software (ISE-TCAD software).