Effects of doping of intermediate band region on intermediate band solar cell characteristics

Effects of doping density (N_I) of the intermediate band region on the short-circuit current, open-circuit voltage and fill factor of an intermediate band solar cell (IBSC) are analyzed. The individual contribution of each of these variables on the conversion efficiency is investigated. The short-circuit current exhibits the maximum variation with N_I. Open-circuit voltage shows negligible dependence on N_I. Contrary to a previously published result, the fill factor in our case is not sensitive to the changes in N_I. For our choice of IBSC parameters, it is found that the maximum generation, as well as the maximum efficiency, occurs at a value of IB occupation probability which is much smaller than the commonly accepted value of 0.5.