Title :
Band structures and optical gain of InGaAsN/GaAsN strained quantum wells under electric field
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
A 10-band k.p formula including electric field effect is introduced to calculate the band structures and optical gain of multilayer dilute nitride semiconductors. The band structure and optical gain of 70 Å In0.37Ga0.63As0.975N0.025 compressive strain quantum well with tensile strained 200 Å GaAs0.997N0.003 barrier with emission wavelength at 1.3 um are investigated. Under an electric field of 100 keV/cm, the fundamental interband transition Stark shift is calculated, the red shift is about 140.5 meV. The peak gain is greatly decreased from 4396 cm-1 to 865 cm-1 for carrier concentration of 8×1018 cm-3. If considering dielectric effect, the effective electric field is 7.22 keV/cm, the Stark shift is greatly depressed to 1.6 meV and peak gain is slightly decreased to 4226 cm-1.
Keywords :
III-V semiconductors; Stark effect; band structure; carrier density; compressive strength; electric field effects; gallium arsenide; indium compounds; permittivity; photoluminescence; red shift; semiconductor quantum wells; tensile strength; wide band gap semiconductors; In0.37Ga0.63As0.975N0.025-GaAs0.997N0.003; band structure; carrier concentration; compressive strain quantum well; dielectric effect; electric field effect; emission wavelength; interband transition Stark shift; multilayer dilute nitride semiconductors; optical gain; permittivity; photoluminescence; red shift; size 200 A; size 70 A; tensile strained barrier; InGaAsN; band structure; optical gain;
Conference_Titel :
Electrical & Computer Engineering (ICECE), 2012 7th International Conference on
Conference_Location :
Dhaka
Print_ISBN :
978-1-4673-1434-3
DOI :
10.1109/ICECE.2012.6471559
