Parasite sensitive analysis for a Ka-band low-power (7.1mW) low-NF wideband amplifier

In this paper, we present a K_a-band (27GHz), lowpower (7.1mW), low-noise (3.5dB) amplifier built on a 1.2-V CMOS process. New impedance and noise matching techniques are introduced to the proposed architecture through reactive inter-stage gain boosting and coupling of input matching inductors. On a platform of 0.09-μm IBM CMOS technology, extensive modeling of layout parasites and sensitivity analysis (accounting for process mismatch) are performed to ensure a reliable RF analysis. The single-stage K_a-band amplifier achieves a peak S₂₁ of 11.3dB near 27GHz, drawing a bias current of 5.964mA from the 1.2V rail. Minimum port-reflection figures (S₁₁ and S₂₂) for the amplifier are -15dB and -39dB, respectively, whereas the linear range of input power (indicated by IIP₃) has a maximum limit of -0.5dbm. The circuit achieves better performance in terms of bandwidth, port matching and power demand when compared with simulated results of published millimeter-wave CMOS amplifiers.