Title :
An ultra wideband LNA design and comparison between different corner simulation
Author :
Chowdhury, M.A.M.
Author_Institution :
Electr. & Electron. Dept., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh
Abstract :
An wide-band Low Noise Amplifier (LNA) is designed with differential output using IBM 90nm CMOS process. This LNA circuit has a centre frequency of 18.3 GHz. Gain of this designed circuit at the centre frequency is around 14 dB. It can be operated from around 14.2GHz to around 19.9 GHz with considerably high gain. -3 dB bandwidth of this LNA is around 5.8 GHz. Power consumption of this circuit is around 80-100 micro-watt. Supply voltage of this LNA circuit is 1.4V. This slight variations in the value of different parameters are found in different corner simulations of the circuit.
Keywords :
CMOS analogue integrated circuits; MMIC amplifiers; low noise amplifiers; ultra wideband technology; IBM CMOS process; LNA circuit; corner simulation; frequency 18.3 GHz; low noise amplifier; power consumption; size 90 nm; ultrawideband LNA design; voltage 1.4 V; Bandwidth; Frequency response; Gain; Integrated circuit modeling; MOSFET; Power demand; Topology; Ultra-wideband; cascade stage; different corner analysis; high centre frequency; high gain; low power consumption;
Conference_Titel :
Electrical & Computer Engineering (ICECE), 2012 7th International Conference on
Conference_Location :
Dhaka
Print_ISBN :
978-1-4673-1434-3
DOI :
10.1109/ICECE.2012.6471581
