An ultra wideband LNA design and comparison between different corner simulation

Author

Chowdhury, M.A.M.

Author_Institution

Electr. & Electron. Dept., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh

fYear

2012

fDate

20-22 Dec. 2012

Firstpage

438

Lastpage

442

Abstract

An wide-band Low Noise Amplifier (LNA) is designed with differential output using IBM 90nm CMOS process. This LNA circuit has a centre frequency of 18.3 GHz. Gain of this designed circuit at the centre frequency is around 14 dB. It can be operated from around 14.2GHz to around 19.9 GHz with considerably high gain. -3 dB bandwidth of this LNA is around 5.8 GHz. Power consumption of this circuit is around 80-100 micro-watt. Supply voltage of this LNA circuit is 1.4V. This slight variations in the value of different parameters are found in different corner simulations of the circuit.

Keywords

CMOS analogue integrated circuits; MMIC amplifiers; low noise amplifiers; ultra wideband technology; IBM CMOS process; LNA circuit; corner simulation; frequency 18.3 GHz; low noise amplifier; power consumption; size 90 nm; ultrawideband LNA design; voltage 1.4 V; Bandwidth; Frequency response; Gain; Integrated circuit modeling; MOSFET; Power demand; Topology; Ultra-wideband; cascade stage; different corner analysis; high centre frequency; high gain; low power consumption;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical & Computer Engineering (ICECE), 2012 7th International Conference on

Conference_Location

Dhaka

Print_ISBN

978-1-4673-1434-3

Type

conf

DOI

10.1109/ICECE.2012.6471581

Filename

6471581