InGaSb based n-MOSFET: Modeling and performance analysis

Author

Islam, Md Shariful ; Nayeem, Md O. G. ; Alam, Md Nur Kutubul ; Islam, Md Rafiqul

Author_Institution

Dept. of Electr. & Electron. Eng., Khulna Univ. of Eng. & Technol., Khulna, Bangladesh

fYear

2012

fDate

20-22 Dec. 2012

Firstpage

663

Lastpage

666

Abstract

In this paper, InGaSb based n-MOSFET model is proposed under unstrained, and 0.7% and 1.7% compressive strained conditions. Using well known Silvacos´s ATLAS device simulator the I_D-V_G, I_D-V_DS, mobility, subthreshold swing and threshold voltage characteristics are simulated and analyzed. The performance of the strained structure is found to be better then the unstrained structure. It also found that the device performances have strong temperature dependent. The propose device structure shows highest drain current and highest mobility compared to recently published experimental results for InGaSb-based p-MOSFET.

Keywords

MOSFET; gallium compounds; indium compounds; InGaSb; Silvacos ATLAS device simulator; drain current; mobility characteristics; n-MOSFET model; performance analysis; strained structure; subthreshold swing characteristics; threshold voltage characteristics; unstrained structure; Electron mobility; Logic gates; MOSFET; MOSFET circuits; Materials; Strain; Threshold voltage; Compressive strain; High drain current; High mobility; InGaSb based n-MOSFET;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical & Computer Engineering (ICECE), 2012 7th International Conference on

Conference_Location

Dhaka

Print_ISBN

978-1-4673-1434-3

Type

conf

DOI

10.1109/ICECE.2012.6471637

Filename

6471637