Analytical modelling of an asymmetric pocket implanted n-channel MOSFETs

Author

Islam, S.M.N. ; Khan, M. Ziaur Rahman

Author_Institution

Inst. of Inf. & Commun. Technol., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh

fYear

2012

fDate

20-22 Dec. 2012

Firstpage

670

Lastpage

673

Abstract

Analytical model for surface potential of a pocket implanted asymmetric n-channel MOSFET device has been derived upon solving one dimensional Poisson´s equation. The continuity of potential and electric field in lateral direction is satisfied and appropriate boundary conditions are used while deriving the model. The dependence of the surface potential on different device parameters and biasing conditions has also been studied. The result of the proposed model is compared with the data available in the literature and good agreement was obtained.

Keywords

MOSFET; Poisson equation; semiconductor device models; surface potential; analytical modelling; asymmetric pocket-implanted n-channel MOSFET device; biasing conditions; boundary conditions; device parameters; electric field; one-dimensional Poisson equation; surface potential; Analytical models; Electric fields; Electric potential; Hot carriers; MOSFET; Reliability; Semiconductor device modeling; Deep Lightly Doped Drain (DLDD); Drain Induced Barrier Lowering (DIBL); Large Scale Integration (LSI); Short Channel Effect (SCE);

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical & Computer Engineering (ICECE), 2012 7th International Conference on

Conference_Location

Dhaka

Print_ISBN

978-1-4673-1434-3

Type

conf

DOI

10.1109/ICECE.2012.6471639

Filename

6471639