Self-consistent determination of threshold voltage of In-rich Gate-All-Around InxGa1−xAs nanowire transistor incorporating quantum mechanical effect

This paper presents quantum definition based threshold voltage calculation of Gate-All-Around InGaAs nanowire transistor. Though similar determination was previously established for TG FinFETs in recent literature, application of this method on Gate-All-Around Nanowire Transistor is yet to be done. A self-consistent solver, which takes wave function penetration and other quantum mechanical effects into account, has been used here to establish the capacitance-voltage characteristics that have been used for threshold voltage calculation. Using the extracted threshold voltages, effect of channel width and channel material composition variation on threshold has been studied and a modification of classical analytical formula is proposed based on a fitting parameter.