Title :
Carrier diffusion time delay of pocket implanted nano scale n-MOSFET
Author :
Ferdous, F. ; Bhuyan, Monowar H. ; Khosru, Quazi D. M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Int. Islamic Univ. Chittagong, Dhaka, Bangladesh
Abstract :
This paper presents an analytical model for the calculations of carrier diffusion time delay in pocket implanted nano scale n-MOSFET. The model is developed using the mobility model of the pocket implanted n-MOSFET developed previously. The developed model utilizes the linear pocket profile to derive the effective electric field that affects the mobility in the channel. The model has been studied using simulations for the various device and pocket profile parameters. The model will be useful to study the behaviour of the nano scaled pocket implanted n-MOSFET for high frequency operation.
Keywords :
MOSFET; carrier mobility; nanoelectronics; analytical model; carrier diffusion time delay; channel mobility; electric field; linear pocket profile; mobility model; pocket implanted nano scale n-MOSFET; pocket profile parameter; Delay effects; Doping; Logic gates; MOSFET circuits; Mathematical model; Scattering; Semiconductor process modeling; Effective mobility; diffusion time; effective electric field; pocket implanted n-MOSFET;
Conference_Titel :
Electrical & Computer Engineering (ICECE), 2012 7th International Conference on
Conference_Location :
Dhaka
Print_ISBN :
978-1-4673-1434-3
DOI :
10.1109/ICECE.2012.6471642
