Carrier diffusion time delay of pocket implanted nano scale n-MOSFET

Author

Ferdous, F. ; Bhuyan, Monowar H. ; Khosru, Quazi D. M.

Author_Institution

Dept. of Electr. & Electron. Eng., Int. Islamic Univ. Chittagong, Dhaka, Bangladesh

fYear

2012

fDate

20-22 Dec. 2012

Firstpage

682

Lastpage

685

Abstract

This paper presents an analytical model for the calculations of carrier diffusion time delay in pocket implanted nano scale n-MOSFET. The model is developed using the mobility model of the pocket implanted n-MOSFET developed previously. The developed model utilizes the linear pocket profile to derive the effective electric field that affects the mobility in the channel. The model has been studied using simulations for the various device and pocket profile parameters. The model will be useful to study the behaviour of the nano scaled pocket implanted n-MOSFET for high frequency operation.

Keywords

MOSFET; carrier mobility; nanoelectronics; analytical model; carrier diffusion time delay; channel mobility; electric field; linear pocket profile; mobility model; pocket implanted nano scale n-MOSFET; pocket profile parameter; Delay effects; Doping; Logic gates; MOSFET circuits; Mathematical model; Scattering; Semiconductor process modeling; Effective mobility; diffusion time; effective electric field; pocket implanted n-MOSFET;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical & Computer Engineering (ICECE), 2012 7th International Conference on

Conference_Location

Dhaka

Print_ISBN

978-1-4673-1434-3

Type

conf

DOI

10.1109/ICECE.2012.6471642

Filename

6471642