• DocumentCode
    599780
  • Title

    Ultra high-current-gain InxGa1−xSb-based DHBT with compositional graded base

  • Author

    Alam, Md Nur Kutubul ; Nayeem, Md O. G. ; Islam, Md Shariful ; Islam, Md Rafiqul

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Khulna Univ. of Eng. & Technol., Khulna, Bangladesh
  • fYear
    2012
  • fDate
    20-22 Dec. 2012
  • Firstpage
    799
  • Lastpage
    801
  • Abstract
    InxGa1-xSb-based double heterojunction bipolar transistor (DHBT) with compositional graded base and collector is presented. A numerical device simulator Silvaco´s ATLAS is used to analyze the performance of the device. The Gummel plots and simulation analysis demonstrate extremely high DC current gain with uniform characteristic for the wide range of collector current. The magnitude of the current gain is found to about 1300 and it is the highest gain for HBTs/DHBTs as reported so far. Preliminarily we achieved this extremely high gain may be due to energy band engineering using compositional gradient technique in the device structure.
  • Keywords
    electronic engineering computing; heterojunction bipolar transistors; indium compounds; semiconductor device models; ATLAS; DHBT; InxGa1-xSb; Silvaco; compositional graded base; double heterojunction bipolar transistor; high DC current gain; numerical device simulator; simulation analysis; Electric fields; Heterojunction bipolar transistors; Indium phosphide; Junctions; Numerical models; Photonic band gap; DC current gain; InGaSb-based DHBT; compositional graded base;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical & Computer Engineering (ICECE), 2012 7th International Conference on
  • Conference_Location
    Dhaka
  • Print_ISBN
    978-1-4673-1434-3
  • Type

    conf

  • DOI
    10.1109/ICECE.2012.6471671
  • Filename
    6471671
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=599780