Title :
Ultra high-current-gain InxGa1−xSb-based DHBT with compositional graded base
Author :
Alam, Md Nur Kutubul ; Nayeem, Md O. G. ; Islam, Md Shariful ; Islam, Md Rafiqul
Author_Institution :
Dept. of Electr. & Electron. Eng., Khulna Univ. of Eng. & Technol., Khulna, Bangladesh
Abstract :
InxGa1-xSb-based double heterojunction bipolar transistor (DHBT) with compositional graded base and collector is presented. A numerical device simulator Silvaco´s ATLAS is used to analyze the performance of the device. The Gummel plots and simulation analysis demonstrate extremely high DC current gain with uniform characteristic for the wide range of collector current. The magnitude of the current gain is found to about 1300 and it is the highest gain for HBTs/DHBTs as reported so far. Preliminarily we achieved this extremely high gain may be due to energy band engineering using compositional gradient technique in the device structure.
Keywords :
electronic engineering computing; heterojunction bipolar transistors; indium compounds; semiconductor device models; ATLAS; DHBT; InxGa1-xSb; Silvaco; compositional graded base; double heterojunction bipolar transistor; high DC current gain; numerical device simulator; simulation analysis; Electric fields; Heterojunction bipolar transistors; Indium phosphide; Junctions; Numerical models; Photonic band gap; DC current gain; InGaSb-based DHBT; compositional graded base;
Conference_Titel :
Electrical & Computer Engineering (ICECE), 2012 7th International Conference on
Conference_Location :
Dhaka
Print_ISBN :
978-1-4673-1434-3
DOI :
10.1109/ICECE.2012.6471671
