Title :
Vertical transport in InAs/GaSb type-II superlattices
Author :
Umana-Membreno, G.A. ; Klein, Bernhard ; Kala, Hemendra ; Antoszewski, J. ; Gautam, Geetika ; Kutty, M.N. ; Plis, Elena ; Krishna, Sanjay ; Faraone, L.
Author_Institution :
Sch. of Electr., Electron. & Comput. Eng., Univ. of Western Australia, Crawley, WA, Australia
Abstract :
In this work, we report on the measurement of vertical transport parameters in p-doped InAs/GaSb type-II superlattices for long-wavelength infrared detectors. Since the Hall effect technique cannot be used for vertical transport measurements, a magnetoresistance approach has been used. The magnetore-sistance data was obtained at electric fields not exceeding 25 V/cm and magnetic fields up to 12T. It is shown that at room temperature the sample conductivity is due to four distinct carriers, associated with the majority carrier holes, side-wall inversion layer electrons, and two minority carrier electrons likely associated with two distinct conduction band levels.
Keywords :
II-VI semiconductors; conduction bands; gallium compounds; indium compounds; infrared detectors; magnetoresistance; semiconductor superlattices; Hall effect technique; InAs-GaSb; conduction band levels; long-wavelength infrared detectors; magnetoresistance approach; magnetoresistance data; minority carrier electrons; monirity carrier holes; p-doped type-II superlattices; sample conductivity; side-wall inversion layer electrons; temperature 293 K to 298 K; vertical transport measurements; Charge carrier processes; Conductivity; Detectors; Magnetic field measurement; Magnetoresistance; Superlattices;
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4673-3047-3
DOI :
10.1109/COMMAD.2012.6472332
