Effects of Au catalyst on GaAs (111)B surface during annealing

Author

Liao, Z.M. ; Xu, H.Y. ; Sun, Wen ; Guo, Y.N. ; Yang, Lei ; Chen, Z.G. ; Zou, Jingxin ; Lu, Z.Y. ; Chen, P.P. ; Lu, Wenchao

Author_Institution

Mater. Eng., Univ. of Queensland, Brisbane, QLD, Australia

fYear

2012

fDate

12-14 Dec. 2012

Firstpage

7

Lastpage

8

Abstract

To understand the growth mechanism and the effect of catalysts in growing III-V epitaxial nanowires, GaAs (111)_B substrates with Au thin films were annealed in a molecular beam epitaxy (MBE) system. Scanning/transmission electron microscopy (SEM/TEM) investigations indicate that, during annealing, the Au catalysts were formed and affect significantly the surface morphology of the GaAs substrates.

Keywords

annealing; catalysts; gallium arsenide; molecular beam epitaxial growth; nanowires; scanning electron microscopy; surface morphology; transmission electron microscopy; GaAs; III-V epitaxial nanowires; MBE system; SEM; TEM; annealing; catalyst; molecular beam epitaxy; scanning electron microscopy; surface morphology; transmission electron microscopy; Annealing; Gallium arsenide; Gold; Nanowires; Scanning electron microscopy; Substrates; Surface morphology;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on

Conference_Location

Melbourne, VIC

ISSN

1097-2137

Print_ISBN

978-1-4673-3047-3

Type

conf

DOI

10.1109/COMMAD.2012.6472333

Filename

6472333