Title :
The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures
Author :
Carrad, D. ; Burke, A.M. ; Waddington, Daniel ; Lyttleton, R. ; Tan, H.H. ; Reece, Peter J. ; Klochan, O. ; Hamilton, A.R. ; Rai, Atul ; Reuter, D. ; Wieck, A.D. ; Micolich, A.P.
Author_Institution :
Sch. of Phys., Univ. of New South Wales, Sydney, NSW, Australia
Abstract :
Gate instability and hysteresis in Si-doped p-type AlGaAs/GaAs heterostructures impedes the development of nanoscale hole devices, which are of interest for topics from quantum computing to novel spin physics. We report an extended study conducted using matched n-type and p-type heterostructures, with and without insulated gates, aimed at understanding the origin of the hysteresis. We show the hysteresis is not due to the inherent `leakiness´ of gates on p-type heterostructures, as commonly believed. Instead, hysteresis arises from a combination of GaAs surface-state trapping and charge migration in the doping layer.
Keywords :
III-VI semiconductors; aluminium compounds; gallium arsenide; quantum computing; semiconductor doping; semiconductor heterojunctions; silicon; spin dynamics; AlGaAs-GaAs; Si; charge migration; doping layer; gate hysteresis; gate instability; insulated gates; leakiness; matched n-type heterostructures; nanoscale hole devices; p-type heterostructures; p-type silicon-doped heterostructures; quantum computing; spin physics; surface-state trapping; Electron devices; Gallium arsenide; Hysteresis; Logic gates; Physics; Silicon; Surface treatment;
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4673-3047-3
DOI :
10.1109/COMMAD.2012.6472334
