DocumentCode
599823
Title
Structural characteristics of GeMn diluted magnetic semiconductor nanostructures
Author
Jin Zou ; Yong Wang ; Faxian Xiu ; Zuoming Zhao ; Wang, K.L.
Author_Institution
Centre for Microscopy & Microanalysis, Univ. of Queensland, St. Lucia, QLD, Australia
fYear
2012
fDate
12-14 Dec. 2012
Firstpage
13
Lastpage
14
Abstract
In this study, the structural characteristics of GeMn diluted magnetic semiconductor (DMS) thin films grown by molecular beam epitaxy (MBE) with different growth conditions are summarised.
Keywords
germanium compounds; molecular beam epitaxial growth; nanostructured materials; semiconductor growth; semiconductor thin films; semimagnetic semiconductors; DMS thin film; GeMn; MBE; diluted magnetic semiconductor nanostructure; growth condition; molecular beam epitaxy; structural characteristics; Lattices; Magnetic semiconductors; Manganese; Molecular beam epitaxial growth; Silicon; Substrates; Superlattices;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location
Melbourne, VIC
ISSN
1097-2137
Print_ISBN
978-1-4673-3047-3
Type
conf
DOI
10.1109/COMMAD.2012.6472336
Filename
6472336
Link To Document