DocumentCode :
599823
Title :
Structural characteristics of GeMn diluted magnetic semiconductor nanostructures
Author :
Jin Zou ; Yong Wang ; Faxian Xiu ; Zuoming Zhao ; Wang, K.L.
Author_Institution :
Centre for Microscopy & Microanalysis, Univ. of Queensland, St. Lucia, QLD, Australia
fYear :
2012
fDate :
12-14 Dec. 2012
Firstpage :
13
Lastpage :
14
Abstract :
In this study, the structural characteristics of GeMn diluted magnetic semiconductor (DMS) thin films grown by molecular beam epitaxy (MBE) with different growth conditions are summarised.
Keywords :
germanium compounds; molecular beam epitaxial growth; nanostructured materials; semiconductor growth; semiconductor thin films; semimagnetic semiconductors; DMS thin film; GeMn; MBE; diluted magnetic semiconductor nanostructure; growth condition; molecular beam epitaxy; structural characteristics; Lattices; Magnetic semiconductors; Manganese; Molecular beam epitaxial growth; Silicon; Substrates; Superlattices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location :
Melbourne, VIC
ISSN :
1097-2137
Print_ISBN :
978-1-4673-3047-3
Type :
conf
DOI :
10.1109/COMMAD.2012.6472336
Filename :
6472336
Link To Document :
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