DocumentCode :
599824
Title :
A Comparison of InGaAs and Ge photonic power converters for long wavelength power over fibre
Author :
Allwood, G.A. ; Wild, G. ; Hinckley, S.
Author_Institution :
Centre for Commun. Eng. Res., Edith Cowan Univ., Joondalup, WA, Australia
fYear :
2012
fDate :
12-14 Dec. 2012
Firstpage :
15
Lastpage :
16
Abstract :
Here, we present a comparison of the optical to electrical power conversion efficiency for off-the-shelf InGaAs and Ge photodiodes used as photonic power converters for power over fibre applications. The results show that, whilst the fill factor for the InGaAs photodiode is lower, the overall power conversion efficiency is better at long wavelengths due to the larger open circuit voltages.
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; germanium; indium compounds; photodiodes; power convertors; Ge; Ge photonic power converters; InGaAs; InGaAs photonic power converters; electrical power conversion efficiency; long wavelength power over fibre; off-the-shelf Ge photodiodes; off-the-shelf InGaAs photodiodes; open circuit voltages; optical power conversion efficiency; Indium gallium arsenide; Optical attenuators; Optical fibers; Photodiodes; Photonics; Power conversion;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location :
Melbourne, VIC
ISSN :
1097-2137
Print_ISBN :
978-1-4673-3047-3
Type :
conf
DOI :
10.1109/COMMAD.2012.6472337
Filename :
6472337
Link To Document :
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