• DocumentCode
    599826
  • Title

    Scaling FETs to (beyond?) 10 nm: From semiclassical to quantum models

  • Author

    Fischett, M.V. ; Aboud, S.J. ; Kim, Jung-Ho ; Ong, Z.Y. ; Narayanan, Shrikanth

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Univ. of Texas at Dallas, Richardson, TX, USA
  • fYear
    2012
  • fDate
    12-14 Dec. 2012
  • Firstpage
    19
  • Lastpage
    20
  • Abstract
    We present full-band semi-classical and quantum-mechanical transport models required to study electronic transport in nanometer-scale devices.
  • Keywords
    field effect transistors; nanoelectronics; quantum theory; semiconductor device models; FET scaling; electronic transport; full-band semiclassical transport models; nanometer-scale devices; quantum models; quantum-mechanical transport models; Field effect transistors; Graphene; Logic gates; Phonons; Scattering; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
  • Conference_Location
    Melbourne, VIC
  • ISSN
    1097-2137
  • Print_ISBN
    978-1-4673-3047-3
  • Type

    conf

  • DOI
    10.1109/COMMAD.2012.6472339
  • Filename
    6472339
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=599826