Title :
Scaling FETs to (beyond?) 10 nm: From semiclassical to quantum models
Author :
Fischett, M.V. ; Aboud, S.J. ; Kim, Jung-Ho ; Ong, Z.Y. ; Narayanan, Shrikanth
Author_Institution :
Dept. of Mater. Sci. & Eng., Univ. of Texas at Dallas, Richardson, TX, USA
Abstract :
We present full-band semi-classical and quantum-mechanical transport models required to study electronic transport in nanometer-scale devices.
Keywords :
field effect transistors; nanoelectronics; quantum theory; semiconductor device models; FET scaling; electronic transport; full-band semiclassical transport models; nanometer-scale devices; quantum models; quantum-mechanical transport models; Field effect transistors; Graphene; Logic gates; Phonons; Scattering; Silicon;
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4673-3047-3
DOI :
10.1109/COMMAD.2012.6472339
