Improvement of minority carrier lifetime in GaAs/AlxGa1−xAs core-shell nanowires

Author

Jiang, N. ; Parkinson, P. ; Gao, Q. ; Wong-Leung, J. ; Breuer, Stefan ; Tan, H.H. ; Jagadish, C.

Author_Institution

Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia

fYear

2012

fDate

12-14 Dec. 2012

Firstpage

33

Lastpage

34

Abstract

GaAs/Al_xGa_1-xAs core-shell nanowires were grown by metal organic chemical vapour deposition with Au-catalysed GaAs cores. Cross-section transmission electron microscope bright field images show that the tapering at bottom of the nanowires is mainly caused by GaAs cap growth. Time-resolved photo-luminescence measurements of single nanowires were taken at room temperature and a minority carrier lifetime of (1.02±0.43) ns was obtained for single nanowires with Al_xGa_1-xAs shell grown at 750°C. A close correlation between the shell growth temperature and minority carrier lifetime has also been observed.

Keywords

MOCVD; aluminium compounds; carrier lifetime; gallium arsenide; nanowires; photoluminescence; transmission electron microscopy; GaAs-Al_xGa_1-xAs; core-shell nanowires; cross-section transmission electron microscope bright field images; growth temperature; metal organic chemical vapour deposition; minority carrier lifetime; single nanowires; tapering; temperature 750 C; time-resolved photoluminescence measurements; Charge carrier lifetime; Educational institutions; Gallium arsenide; Nanowires; Scanning electron microscopy; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on

Conference_Location

Melbourne, VIC

ISSN

1097-2137

Print_ISBN

978-1-4673-3047-3

Type

conf

DOI

10.1109/COMMAD.2012.6472346

Filename

6472346