Title :
Improvement of minority carrier lifetime in GaAs/AlxGa1−xAs core-shell nanowires
Author :
Jiang, N. ; Parkinson, P. ; Gao, Q. ; Wong-Leung, J. ; Breuer, Stefan ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
GaAs/AlxGa1-xAs core-shell nanowires were grown by metal organic chemical vapour deposition with Au-catalysed GaAs cores. Cross-section transmission electron microscope bright field images show that the tapering at bottom of the nanowires is mainly caused by GaAs cap growth. Time-resolved photo-luminescence measurements of single nanowires were taken at room temperature and a minority carrier lifetime of (1.02±0.43) ns was obtained for single nanowires with AlxGa1-xAs shell grown at 750°C. A close correlation between the shell growth temperature and minority carrier lifetime has also been observed.
Keywords :
MOCVD; aluminium compounds; carrier lifetime; gallium arsenide; nanowires; photoluminescence; transmission electron microscopy; GaAs-AlxGa1-xAs; core-shell nanowires; cross-section transmission electron microscope bright field images; growth temperature; metal organic chemical vapour deposition; minority carrier lifetime; single nanowires; tapering; temperature 750 C; time-resolved photoluminescence measurements; Charge carrier lifetime; Educational institutions; Gallium arsenide; Nanowires; Scanning electron microscopy; Temperature measurement;
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4673-3047-3
DOI :
10.1109/COMMAD.2012.6472346
