Title :
MOCVD growth of GaAs nanowires using Ga droplets
Author :
Breuer, Stefan ; Karouta, F. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
We report on growth of GaAs nanowires on Si(111) substrates using Ga droplets by metal-organic chemical vapour deposition (MOCVD). Appropriate growth conditions to achieve stabilization of small Ga droplets as well as Ga-assisted VLS growth of GaAs nanowires were found. This work facilitates comparative studies of crystalline quality and nanowire surfaces as a function of the droplet (catalyst) material.
Keywords :
III-V semiconductors; MOCVD; catalysts; drops; gallium arsenide; nanowires; semiconductor growth; silicon; GaAs; MOCVD growth; Si; VLS growth; catalyst; crystalline quality; droplet; growth condition; metal-organic chemical vapour deposition; nanowire surface; stabilization; Gallium arsenide; Gold; MOCVD; Nanowires; Silicon; Substrates;
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4673-3047-3
DOI :
10.1109/COMMAD.2012.6472349
