Title :
Growth of InP nanowires on silicon using a thin buffer layer
Author :
Fonseka, H.A. ; Tan, H.H. ; Kang, Joseph H. ; Paiman, S. ; Gao, Q. ; Parkinson, P. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
InP nanowires (NWs) are grown on Si substrate using a thin inter-mediate buffer layer. The buffer layer is grown in two steps. An initial nucleation layer is crucial to accommodate the lattice mismatch between InP and Si. A high quality 2nd layer is grown on this initial layer with smooth morphology suitable for the NW growth. More than 97% vertical yield is achieved on the buffer layer and the morphology and photoluminescence of the NWs are similar to those grown on InP(111)B substrate.
Keywords :
III-V semiconductors; indium compounds; nanowires; nucleation; photoluminescence; silicon; InP; Si; initial nucleation layer; nanowire; photoluminescence; silicon; thin intermediate buffer layer; Buffer layers; Indium phosphide; Morphology; Nanowires; Silicon; Substrates; Wires;
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4673-3047-3
DOI :
10.1109/COMMAD.2012.6472351
