Title :
InP nanowires grown by SA-MOVPE
Author :
Gao, Q. ; Tan, H.H. ; Fu, L. ; Parkinson, P. ; Breuer, Stefan ; Wong-Leung, J. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
A systematic growth temperature study has been performed to achieve high quality InP nanowires (NWs) by selective-area metal-organic vapour-phase epitaxy (SA-MOVPE). The optical quality of these nanowires was evaluated from time-resolved photoluminescence (TRPL) at 300 K.
Keywords :
III-V semiconductors; MOCVD; indium compounds; nanowires; photoluminescence; vapour phase epitaxial growth; InP; SA-MOVPE; high quality InP nanowires; optical quality; selective-area metal-organic vapour-phase epitaxy; systematic growth temperature study; temperature 300 K; time-resolved photoluminescence; Charge carrier lifetime; Epitaxial growth; Indium phosphide; Nanowires; Optical imaging; Optical variables measurement; Radiative recombination;
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4673-3047-3
DOI :
10.1109/COMMAD.2012.6472352
