DocumentCode
599839
Title
Effect of plasmonic nanoparticles on the quantum efficiency of III–V semiconductor nanowire emitters
Author
Mokkapati, S. ; Saxena, D. ; Gao, Q. ; Tan, H.H. ; Jagadish, C.
Author_Institution
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
fYear
2012
fDate
12-14 Dec. 2012
Firstpage
47
Lastpage
48
Abstract
We study the possibility of increasing the quantum efficiency of III-V semiconductor nanowire emitters using plasmonics. Results on the effect of plasmonic nanoparticle size, emitter-plasmonic nanoparticle distance and the initial quantum efficiency of the emitter on the quantum efficiency enhancement factor are presented.
Keywords
III-V semiconductors; nanoelectronics; nanowires; optoelectronic devices; plasmonics; semiconductor devices; III-V semiconductor nanowire emitters; emitter-plasmonic nanoparticle distance; initial quantum efficiency; plasmonic nanoparticle size; quantum efficiency enhancement factor; Equations; Gallium arsenide; Mathematical model; Nanoparticles; Nanoscale devices; Plasmons; Radiative recombination;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location
Melbourne, VIC
ISSN
1097-2137
Print_ISBN
978-1-4673-3047-3
Type
conf
DOI
10.1109/COMMAD.2012.6472353
Filename
6472353
Link To Document