Title :
Progress towards opto-electronic characterization of indium phosphide nanowire transistors at milli-Kelvin temperatures
Author :
Willems van Beveren, L.H. ; McCallum, J.C. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Centre for Quantum Comput. & Commun. Technol. (CQC2T), Univ. of Melbourne, Melbourne, VIC, Australia
Abstract :
In this paper we present our progress towards the opto-electronic characterization of indium phosphide (InP) nanowire transistors at milli-Kelvin temperatures. First, we have investigated the electronic transport of the InP nanowires by current-voltage (I-V) spectroscopy as a function of temperature from 300 K down to 40 K. Second, we show the successful operation of a red light emitting diode (LED) at liquid-Helium temperatures to be used for opto-electronic device characterization.
Keywords :
III-V semiconductors; field effect transistors; indium compounds; light emitting diodes; nanowires; InP; current-voltage spectroscopy; electronic transport; nanowire transistors; optoelectronic device characterization; red light emitting diode; temperature 40 K to 300 K; Educational institutions; Indium phosphide; Light emitting diodes; Nanoscale devices; Temperature; Temperature measurement;
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4673-3047-3
DOI :
10.1109/COMMAD.2012.6472354
