Title :
Shell formation in InGaAs nanowires driven by lattice latching and polarity effect
Author :
Guo, Youguang ; Zou, Jingxin ; Burgess, Thomas ; Gao, Q. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Mater. Eng., Univ. of Queensland, Brisbane, QLD, Australia
Abstract :
A novel phenomenon of an asymmetric shell formation is observed within the zinc blende structured InGaAs nanowires. It is found that three Ga-rich zones are formed along <;112>A directions, while three In-rich zones are formed along <;112>B directions in the truncated-triangular shells. The polarity-driven lattice latching effect is accounted for this compositional inhomogeneity found in the shell.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; nanowires; quantum wires; InGaAs; asymmetric shell formation; compositional inhomogeneity; polarity effect; polarity-driven lattice latching effect; truncated-triangular shells; zinc blende structured nanowires; Image edge detection; Indium gallium arsenide;
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4673-3047-3
DOI :
10.1109/COMMAD.2012.6472355
