Title :
Droplet epitaxy of strain-free GaAs/AlGaAs quantum molecules for optoelectronic applications
Author :
Lei, W. ; Parkinson, P. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
This work presents a pioneering study on the MOCVD droplet epitaxy of strain-free GaAs/Al0.3Ga0.7As quantum molecules. By choosing the appropriate growth conditions, GaAs quantum molecules can be obtained with controlled size and density. The formation of these molecules is mainly due to the anisotropic migration of Ga adatoms and the edge enhanced crystallization process. Furthermore, these molecules show excellent optical properties, suggesting their promising applications in devices such as infrared photodetectors and quantum information processing.
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; drops; gallium arsenide; optoelectronic devices; semiconductor quantum dots; Ga adatoms; GaAs-Al0.3Ga0.7As; MOCVD droplet epitaxy; anisotropic migration; appropriate growth conditions; controlled density; controlled size; edge enhanced crystallization; optical properties; optoelectronic applications; strain-free GaAs/AlGaAs quantum molecules; Epitaxial growth; Gallium arsenide; MOCVD; Nanostructures; Optical devices; Optical imaging; Substrates;
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4673-3047-3
DOI :
10.1109/COMMAD.2012.6472356
