DocumentCode :
599843
Title :
The influence of small-angle scattering on ballistic transport in quantum dots
Author :
See, A.M. ; Pilgrim, I. ; Scannell, B.C. ; Montgomery, R. ; Klochan, O. ; Burke, A.M. ; Aagesen, Martin ; Lindelof, P.E. ; Farrer, I. ; Ritchie, D.A. ; Hamilton, A.R. ; Taylor, R.P. ; Micolich, A.P.
Author_Institution :
Sch. of Phys., Univ. of New South Wales, Sydney, NSW, Australia
fYear :
2012
fDate :
12-14 Dec. 2012
Firstpage :
55
Lastpage :
56
Abstract :
Disorder increasingly affects performance as electronic devices are reduced in size. The ionized dopants used to populate a device with electrons are particularly problematic, leading to unpredictable changes in the behaviour of devices such as quantum dots each time they are cooled for use. We show that a quantum dot can be used as a highly sensitive probe of changes in disorder potential and that, by removing the ionized dopants and populating the dot electrostatically, its electronic properties become reproducible with high fidelity after thermal cycling to room temperature. Our work demonstrates that the disorder potential has a significant, perhaps even dominant, influence on the electron dynamics, with important implications for `ballistic´ transport in quantum dots.
Keywords :
ballistic transport; semiconductor doping; semiconductor quantum dots; ballistic transport; device behaviour; disorder potential; electron dynamics; electronic device; electronic properties; ionized dopant; quantum dot; size reduction; small-angle scattering; temperature 293 K to 298 K; thermal cycling; Educational institutions; Electric potential; Fluctuations; Logic gates; Quantum dots; Scattering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location :
Melbourne, VIC
ISSN :
1097-2137
Print_ISBN :
978-1-4673-3047-3
Type :
conf
DOI :
10.1109/COMMAD.2012.6472357
Filename :
6472357
Link To Document :
بازگشت