Title :
The 1D g-factor and 0.7 anomaly in QPCs with independent control over density
Author :
Burke, A.M. ; Klochan, O. ; Hamilton, A.R. ; Farrer, I. ; Ritchie, D.A. ; Micolich, A.P.
Author_Institution :
Sch. of Phys., Univ. of New South Wales, Sydney, NSW, Australia
Abstract :
We report the dependence of the 1D Landé g-factor g* on electron density in quantum point contacts (QPCs). We obtain g* values up to 2.8 significantly exceeding previous values for Al-GaAs/GaAs QPCs and approaching that in InGaAs/InP QPCs.
Keywords :
electron density; g-factor; gallium arsenide; indium compounds; quantisation (quantum theory); quantum point contacts; 1D Landé g-factor; InGaAs-InP; QPC; electron density; quantum point contact; Gallium arsenide; HEMTs; Logic gates; MODFETs; Magnetic field measurement; Polyimides; Temperature measurement;
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4673-3047-3
DOI :
10.1109/COMMAD.2012.6472358
