DocumentCode :
599845
Title :
Diffusion and population dynamics of excitons in c-axis grown ZnO quantum wells
Author :
Hall, C.R. ; Richards, G. ; Tollerud, J. ; Tan, H.H. ; Jagadish, C. ; Koike, K. ; Sasa, S. ; Inoue, M. ; Yano, M. ; Davis, Jeremy A.
Author_Institution :
Centre for Atom Opt. & Ultrafast Spectrosc., Swinburne Univ. of Technol., Hawthorn, VIC, Australia
fYear :
2012
fDate :
12-14 Dec. 2012
Firstpage :
59
Lastpage :
60
Abstract :
In this work a transient grating experiment was used to explore the inplane transport properties and two-colour pump-probe and time resolved photolu-minescence experiments were used to explore the population dynamics of excitons in ZnO quantum wells. By implementing stepped barriers in such quantum wells we also show that the overlap of the electron and hole wavefunctions can be controlled.
Keywords :
III-V semiconductors; electrons; excitons; photoluminescence; semiconductor quantum wells; wide band gap semiconductors; zinc compounds; ZnO; electron; excitons; hole wavefunctions; inplane transport properties; quantum wells; time resolved photoluminescence; transient grating experiment; two-colour pump-probe; Electric fields; Excitons; Radiative recombination; Sociology; Statistics; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location :
Melbourne, VIC
ISSN :
1097-2137
Print_ISBN :
978-1-4673-3047-3
Type :
conf
DOI :
10.1109/COMMAD.2012.6472359
Filename :
6472359
Link To Document :
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