DocumentCode :
599848
Title :
Non-equivalent zigzag edge stresses for 2D binary compound honeycomb nanoribbons
Author :
Deng, Jiansong ; Liu, J.Z. ; Medhekar, N.V.
Author_Institution :
Dept. of Mater. Eng., Monash Univ., Clayton, VIC, Australia
fYear :
2012
fDate :
12-14 Dec. 2012
Firstpage :
65
Lastpage :
66
Abstract :
The edge stresses, which are responsible for all physical properties of nanoribbons, always involve two sided non-equivalent edge effects for zigzag honeycomb nanoribbons of two dimensional binary compounds such as BN and MoS2. In present work, we develop an approach to determine the edge stresses of individual non-equivalent zigzag edges. For prototypical system of BN zigzag nanoribbon, the edge stresses of N-terminated and B-terminated zigzag edge are determined. Using this approach, even the edge stresses for particular passivated edges observed in MoS2 nanoribbons are able to be obtained as well. The key results presented here are published in Ref. [1].
Keywords :
III-V semiconductors; ab initio calculations; boron compounds; elasticity; honeycomb structures; molybdenum compounds; nanoribbons; wide band gap semiconductors; 2D binary compound; B-terminated zigzag edge; BN; MoS2; N-terminated zigzag edge; continuum elasticity model; first principles calculations; honeycomb nanoribbons; nonequivalent zigzag edge stresses; passivated edges; Compounds; Computational modeling; Educational institutions; Materials; Potential energy; Strain; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location :
Melbourne, VIC
ISSN :
1097-2137
Print_ISBN :
978-1-4673-3047-3
Type :
conf
DOI :
10.1109/COMMAD.2012.6472362
Filename :
6472362
Link To Document :
بازگشت