Title :
Study of uniformly doped graphene nanoribbon transistor (GNR) FET using quantum simulation
Author :
Akhavan, N.D. ; Jolley, G. ; Membreno, G.U. ; Antoszewski, J. ; Faraone, L.
Author_Institution :
Microelectron. Res. Group, Univ. of Western Australia, Perth, WA, Australia
Abstract :
In this paper we study the performance of uniformly doped graphene nanoribbon FET (GNRFET). Three-dimensional quantum mechanical simulations based on the NEGF formalism have been used in the presence of electron-phonon interaction to study the performance of GNRFET. We found out that uniformly doped GNRFET increases the mobility and performance of GNRFET device compare to conventionally undoped graphene.
Keywords :
electron mobility; electron-proton interactions; field effect transistors; graphene; nanoribbons; quantum theory; semiconductor doping; GNR FET; GNRFET device; NEGF formalism; electron-phonon interaction; mobility; quantum simulation; three-dimensional quantum mechanical simulations; undoped graphene; uniformly doped GNRFET; uniformly doped graphene nanoribbon FET; uniformly doped graphene nanoribbon transistor; Doping; Field effect transistors; Graphene; Logic gates; Phonons; Scattering;
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4673-3047-3
DOI :
10.1109/COMMAD.2012.6472363
