Title :
Ion-implantation and analysis for doped silicon slot waveguides
Author :
Deam, L. ; Stavrias, N. ; Lee, Kin Keung ; McCallum, J.C.
Author_Institution :
Sch. of Phys., Univ. of Melbourne, Melbourne, VIC, Australia
Abstract :
Ion implantation is being used to fabricate silicon-nanocrystal (Si-nc) erbium-doped slot waveguide structures. Photoluminescence (PL) measurements are used to investigate the luminescent and erbium sensitisation properties while Rutherford backscattering spectrometry (RBS) is used to provide structural information. This study is a preliminary step toward development of active elements for silicon optical interconnects.
Keywords :
Rutherford backscattering; elemental semiconductors; erbium; ion implantation; nanostructured materials; optical waveguides; photoluminescence; silicon; Rutherford backscattering spectrometry; Si:Er; doped silicon slot waveguides; erbium sensitisation properties; ion-implantation; luminescent properties; photoluminescence measurements; silicon optical interconnects; silicon-nanocrystal erbium-doped slot waveguide structures; Erbium; Ion implantation; Optical device fabrication; Optical waveguides; Photonics; Silicon; Waveguide lasers;
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4673-3047-3
DOI :
10.1109/COMMAD.2012.6472368
