• DocumentCode
    599855
  • Title

    Comparison of the RF characteristics of inversion channel and depletion channel SOS MOSFETs

  • Author

    Bertling, K. ; Rakic, A.D. ; Yeow, Y.T. ; O´Brien, C.J. ; Domyo, H.

  • Author_Institution
    Sch. of Inf. Technol. & Electr. Eng., Univ. of Queensland, Brisbane, QLD, Australia
  • fYear
    2012
  • fDate
    12-14 Dec. 2012
  • Firstpage
    79
  • Lastpage
    80
  • Abstract
    Measurement of small-signal equivalent circuit parameters was carried out to estimate the RF performance of conventional inversion channel and depletion channel SOS MOSFET´s. It was shown that the latter has significantly higher cutoff frequency fT attributed to electron mobility of the depletion channel.
  • Keywords
    MOSFET; electron mobility; equivalent circuits; silicon-on-insulator; RF characteristics; RF performance; SOS MOSFET; cutoff frequency; depletion channel; electron mobility; inversion channel; small-signal equivalent circuit parameter; Capacitance; Channel estimation; Logic gates; Radio frequency; Semiconductor device measurement; Silicon; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
  • Conference_Location
    Melbourne, VIC
  • ISSN
    1097-2137
  • Print_ISBN
    978-1-4673-3047-3
  • Type

    conf

  • DOI
    10.1109/COMMAD.2012.6472369
  • Filename
    6472369
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=599855