DocumentCode :
599855
Title :
Comparison of the RF characteristics of inversion channel and depletion channel SOS MOSFETs
Author :
Bertling, K. ; Rakic, A.D. ; Yeow, Y.T. ; O´Brien, C.J. ; Domyo, H.
Author_Institution :
Sch. of Inf. Technol. & Electr. Eng., Univ. of Queensland, Brisbane, QLD, Australia
fYear :
2012
fDate :
12-14 Dec. 2012
Firstpage :
79
Lastpage :
80
Abstract :
Measurement of small-signal equivalent circuit parameters was carried out to estimate the RF performance of conventional inversion channel and depletion channel SOS MOSFET´s. It was shown that the latter has significantly higher cutoff frequency fT attributed to electron mobility of the depletion channel.
Keywords :
MOSFET; electron mobility; equivalent circuits; silicon-on-insulator; RF characteristics; RF performance; SOS MOSFET; cutoff frequency; depletion channel; electron mobility; inversion channel; small-signal equivalent circuit parameter; Capacitance; Channel estimation; Logic gates; Radio frequency; Semiconductor device measurement; Silicon; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location :
Melbourne, VIC
ISSN :
1097-2137
Print_ISBN :
978-1-4673-3047-3
Type :
conf
DOI :
10.1109/COMMAD.2012.6472369
Filename :
6472369
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=599855
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