Title :
Raman study on the phase transformations of the meta-stable phases of Si induced by indentation
Author :
Johnson, Brett C. ; Stavrias, N. ; Haberl, B. ; Aji, L.B.B. ; Bradby, J.E. ; McCallum, J.C. ; Williams, James S.
Author_Institution :
Sch. of Phys., Univ. of Melbourne, Melbourne, VIC, Australia
Abstract :
Raman scattering is used to investigate the metastable Si phases formed by indentation. The indent strain, phase distribution and the kinetics of the phase transformations are examined.
Keywords :
Raman spectra; elemental semiconductors; indentation; silicon; solid-state phase transformations; Raman scattering; Si; indent strain; indentation; metastable phase; phase distribution; phase transformations; Annealing; Educational institutions; Measurement by laser beam; Phase measurement; Raman scattering; Silicon; Temperature measurement;
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4673-3047-3
DOI :
10.1109/COMMAD.2012.6472374
