Title :
Resistive switching in high-k dielectrics for non-volatile memory applications
Author :
Elliman, Robert Glen ; Saleh, M.N. ; Venkatachalam, Dinesh Kumar ; Kim, T. ; Belay, Kidane ; Karouta, F.
Author_Institution :
Electron. Mater. Eng. Dept., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
We review our recent research on resistive switching in transition metal oxides for use as nonvolatile resistive random access memory (ReRAM), including the effect of film microstructure on switching characteristics and new data on metal-bridge memory.
Keywords :
high-k dielectric thin films; metals; random-access storage; ReRAM; film microstructure; high-k dielectrics; metal-bridge memory; nonvolatile memory; nonvolatile resistive random access memory; resistive switching; switching characteristics; transition metal oxide; Annealing; Educational institutions; Films; Hafnium compounds; Switches; Voltage measurement;
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4673-3047-3
DOI :
10.1109/COMMAD.2012.6472390
