Title :
Improved performance of InGaAs/GaAs quantum dot solar cells using Si-modulation doping
Author :
Lu, H.F. ; Fu, L. ; Jolley, G. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
N-type silicon modulation doping was introduced into the barrier layers of InGaAs/GaAs quantum dot solar cells (QDSC) at two different doping concentrations. An increased energy conversion efficiency of 8.91 % was obtained for the modulation doped device compared to 6.95 % of the undoped sample due to the additional electron population in the active structure.
Keywords :
III-V semiconductors; doping profiles; elemental semiconductors; gallium arsenide; indium compounds; semiconductor quantum dots; silicon; solar cells; InGaAs-GaAs; N-type silicon modulation doping; QDSC; Si; barrier layers; doping concentration; electron population; energy conversion efficiency; modulation doped device; quantum dot solar cells; silicon-modulation doping; Doping; Epitaxial layers; Gallium arsenide; Indium gallium arsenide; Photovoltaic cells; Quantum dots; Temperature measurement;
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4673-3047-3
DOI :
10.1109/COMMAD.2012.6472393
