• DocumentCode
    599880
  • Title

    Improved GaAs nanowire solar cells using AlGaAs for surface passivation

  • Author

    Lee, Y.H.J. ; Li, Zuyi ; Fu, L. ; Parkinson, P. ; Vora, K. ; Tan, H.H. ; Jagadish, C.

  • Author_Institution
    Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
  • fYear
    2012
  • fDate
    12-14 Dec. 2012
  • Firstpage
    131
  • Lastpage
    132
  • Abstract
    Semiconductor nanowire solar cells (NWSCs) have attracted significant interests owning to their potential in the applications of high-performance solar cells. Here, we report improved GaAs solar cell performance using a high-quality AlGaAs shell for surface passivation. The device exhibits an open-circuit voltage (Voc) of 0.70V, a short-circuit current density (Jsc) of 9.79 mA/cm2, a fill factor (FF) of 0.52, and a total power conversion efficiency (η) of 4.22%. This work suggests a promising route to optimize NWSCs.
  • Keywords
    aluminium compounds; gallium arsenide; nanowires; passivation; short-circuit currents; solar cells; AlGaAs; NWSC; fill factor; high-performance solar cells; open-circuit voltage; power conversion efficiency; semiconductor nanowire solar cells; short-circuit current density; solar cell performance; surface passivation; Gold; Indium tin oxide; Polymers; Resins;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
  • Conference_Location
    Melbourne, VIC
  • ISSN
    1097-2137
  • Print_ISBN
    978-1-4673-3047-3
  • Type

    conf

  • DOI
    10.1109/COMMAD.2012.6472395
  • Filename
    6472395
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=599880