DocumentCode :
599880
Title :
Improved GaAs nanowire solar cells using AlGaAs for surface passivation
Author :
Lee, Y.H.J. ; Li, Zuyi ; Fu, L. ; Parkinson, P. ; Vora, K. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
fYear :
2012
fDate :
12-14 Dec. 2012
Firstpage :
131
Lastpage :
132
Abstract :
Semiconductor nanowire solar cells (NWSCs) have attracted significant interests owning to their potential in the applications of high-performance solar cells. Here, we report improved GaAs solar cell performance using a high-quality AlGaAs shell for surface passivation. The device exhibits an open-circuit voltage (Voc) of 0.70V, a short-circuit current density (Jsc) of 9.79 mA/cm2, a fill factor (FF) of 0.52, and a total power conversion efficiency (η) of 4.22%. This work suggests a promising route to optimize NWSCs.
Keywords :
aluminium compounds; gallium arsenide; nanowires; passivation; short-circuit currents; solar cells; AlGaAs; NWSC; fill factor; high-performance solar cells; open-circuit voltage; power conversion efficiency; semiconductor nanowire solar cells; short-circuit current density; solar cell performance; surface passivation; Gold; Indium tin oxide; Polymers; Resins;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location :
Melbourne, VIC
ISSN :
1097-2137
Print_ISBN :
978-1-4673-3047-3
Type :
conf
DOI :
10.1109/COMMAD.2012.6472395
Filename :
6472395
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=599880
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