Title :
Optoelectronic properties of GaAs nanowire photodetector
Author :
Wang, Huifang ; Parkinson, P. ; Tian, J. ; Saxena, D. ; Mokkapati, S. ; Gao, Q. ; Prasai, P. ; Fu, L. ; Karouta, F. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
A single GaAs nanowire (NW) photodetector (PD) is fabricated based on the back-to-back Schottky diode structure. Optoelectronic properties are characterized by measuring device photocurrent, and also the spectral response, which indicates our device is very sensitive and applicable as a PD.
Keywords :
III-V semiconductors; Schottky diodes; gallium arsenide; nanowires; optoelectronic devices; photodetectors; Schottky diode; nanowire photodetector; optoelectronic properties; photocurrent; spectral response; Gallium arsenide; Laser excitation; Metals; Photoconductivity; Photodetectors; Power lasers; Semiconductor device measurement;
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4673-3047-3
DOI :
10.1109/COMMAD.2012.6472399
