• DocumentCode
    599884
  • Title

    Growth and characterization of GaAs1 − xSbx nanowires

  • Author

    Yuan, Xibo ; Tan, H.H. ; Parkinson, P. ; Wong-Leung, J. ; Breuer, Stefan ; Gao, Q. ; Jagadish, C.

  • Author_Institution
    Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
  • fYear
    2012
  • fDate
    12-14 Dec. 2012
  • Firstpage
    141
  • Lastpage
    142
  • Abstract
    We report the structural and optical characterization of GaAs1-xSbx nanowires (NWs) grown on GaAs (111)B substrates using metalorganic chemical vapour deposition (MOCVD). The NWs are perpendicular to the substrate with almost defect-free zinc blende (ZB) structure. Micro-photoluminescence results demonstrate high emission efficiency at around 1.3 μm from the NWs.
  • Keywords
    III-V semiconductors; MOCVD; antimony compounds; gallium arsenide; nanowires; photoluminescence; semiconductor growth; GaAs1-xSbx; MOCVD; NW; ZB structure; defect-free zinc blende structure; emission efficiency; metalorganic chemical vapour deposition; microphotoluminescence; nanowire growth; optical characterization; structural characterization; substrate; Gallium arsenide; Nanowires; Optical imaging; Scanning electron microscopy; Stimulated emission; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
  • Conference_Location
    Melbourne, VIC
  • ISSN
    1097-2137
  • Print_ISBN
    978-1-4673-3047-3
  • Type

    conf

  • DOI
    10.1109/COMMAD.2012.6472400
  • Filename
    6472400
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=599884