DocumentCode :
599884
Title :
Growth and characterization of GaAs1 − xSbx nanowires
Author :
Yuan, Xibo ; Tan, H.H. ; Parkinson, P. ; Wong-Leung, J. ; Breuer, Stefan ; Gao, Q. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
fYear :
2012
fDate :
12-14 Dec. 2012
Firstpage :
141
Lastpage :
142
Abstract :
We report the structural and optical characterization of GaAs1-xSbx nanowires (NWs) grown on GaAs (111)B substrates using metalorganic chemical vapour deposition (MOCVD). The NWs are perpendicular to the substrate with almost defect-free zinc blende (ZB) structure. Micro-photoluminescence results demonstrate high emission efficiency at around 1.3 μm from the NWs.
Keywords :
III-V semiconductors; MOCVD; antimony compounds; gallium arsenide; nanowires; photoluminescence; semiconductor growth; GaAs1-xSbx; MOCVD; NW; ZB structure; defect-free zinc blende structure; emission efficiency; metalorganic chemical vapour deposition; microphotoluminescence; nanowire growth; optical characterization; structural characterization; substrate; Gallium arsenide; Nanowires; Optical imaging; Scanning electron microscopy; Stimulated emission; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location :
Melbourne, VIC
ISSN :
1097-2137
Print_ISBN :
978-1-4673-3047-3
Type :
conf
DOI :
10.1109/COMMAD.2012.6472400
Filename :
6472400
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=599884
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