Title :
Unequal P distribution in nanowires and the layer during the growth of GaAsP nanowires on GaAs
Author :
Sun, Wen ; Guo, Y.N. ; Xu, H.Y. ; Liao, Z.M. ; Zou, Jingxin ; Gao, Q. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Mater. Eng., Univ. of Queensland, St. Lucia, QLD, Australia
Abstract :
In the growth of GaAsP nanowires on GaAs (001) substrates, it was found that the P concentrations in the nanowires and unintentional two-dimensional (2D) GaAsP layer are different. Possible explanations are given.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; impurity distribution; nanofabrication; nanowires; semiconductor epitaxial layers; semiconductor growth; GaAs; GaAsP; nanowires; phosphorus concentration; unequal phosphorus distribution; unintentional 2D layer; unintentional two-dimensional layer; Epitaxial layers; Gallium arsenide; Lattices; Microscopy; Nanowires; Strain; Substrates;
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4673-3047-3
DOI :
10.1109/COMMAD.2012.6472403
