DocumentCode :
599888
Title :
A numerical model for determining the relative accuracy of the Landé g-factor obtained from ac and dc conductance measurements of Quantum Point Contacts
Author :
Fricke, S. ; Burke, A.M. ; Micolich, A.P.
Author_Institution :
Sch. of Phys., Univ. of New South Wales, Sydney, NSW, Australia
fYear :
2012
fDate :
12-14 Dec. 2012
Firstpage :
149
Lastpage :
150
Abstract :
A number of approaches currently exist for obtaining the Landé effective g-factor g* from experimental measurements of the ac and dc conductance of AlGaAs/GaAs Quantum Point Contacts (QPCs). The correspondence between these methods is not perfect, motivating us to develop an analytical model for assessing the relative accuracy of the various approaches using a perfect, experimental artefact-free data-set. We will present a comparative study of the accuracy of ac and dc-based methods for determining the g-factor in QPCs.
Keywords :
III-V semiconductors; aluminium compounds; electric admittance measurement; g-factor; gallium arsenide; quantum point contacts; AC conductance measurement; AlGaAs-GaAs; DC conductance measurement; Lande effective g-factor; Lande g-factor; quantum point contact; relative accuracy; Accuracy; Analytical models; Data models; Logic gates; Magnetic field measurement; Physics; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location :
Melbourne, VIC
ISSN :
1097-2137
Print_ISBN :
978-1-4673-3047-3
Type :
conf
DOI :
10.1109/COMMAD.2012.6472404
Filename :
6472404
Link To Document :
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