Title :
Few-layered graphene growth by carbon implantation into polycrystalline nickel substrate
Author :
Lee, Kin Keung ; Shiell, T. ; McCallum, J.C. ; Szymanski, R. ; Soncini, A. ; Boskovic, C. ; Jamieson, David N.
Author_Institution :
Centre for Quantum Comput. & Commun. Technol., Univ. of Melbourne, Melbourne, VIC, Australia
Abstract :
Carbon ions were implanted into nickel films to facilitate growth of few-layered graphene. After vacuum annealing at 950 °C, G and 2D peaks were seen in micro-Raman measurements of the nickel film. No D peak, which is associated with sp3 adsorbates and vacancies/defects in graphene, was observed.
Keywords :
Raman spectra; adsorbed layers; annealing; graphene; ion implantation; metallic thin films; nickel; vacancies (crystal); Ni:C; carbon implantation; carbon ions; few-layered graphene growth; microRaman measurements; nickel films; polycrystalline nickel substrate; sp3 adsorbates; temperature 950 degC; vacancies-defects; vacuum annealing; Carbon; Educational institutions; Films; Graphene; Nickel; Quantum computing; Substrates;
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4673-3047-3
DOI :
10.1109/COMMAD.2012.6472416
