• DocumentCode
    599905
  • Title

    Plasma annealing as an effective method for the crystallization of bismuth iron garnet films

  • Author

    Sharda, Ramesh ; Jeffery, R.D. ; Martyniuk, M. ; Woodward, R.C. ; Dell, J.M. ; Faraone, L.

  • Author_Institution
    Sch. of Electr., Electron. & Comput. Eng., Univ. of Western Australia, Crawley, WA, Australia
  • fYear
    2012
  • fDate
    12-14 Dec. 2012
  • Firstpage
    183
  • Lastpage
    184
  • Abstract
    Oxygen plasma annealing was used to crystallise (BiDy)3(FeGa)5O12 (Bi:DyIG) at a temperature of 515°C, which is over 100°C lower compared with conventional thermal annealing. We used a thermal imager to measure and characterise the temperature of the sample with respect to RF power and pressure inside a plasma chamber.
  • Keywords
    annealing; bismuth compounds; crystallisation; dysprosium compounds; garnets; iron compounds; plasma deposition; thin films; (BiDy)3(FeGa)5O12; bismuth iron garnet films; conventional thermal annealing; crystallization; plasma annealing; plasma chamber; radiofrequency power; temperature 515 degC; Annealing; Conductors; Ovens; Plasma temperature; Radio frequency; Temperature measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
  • Conference_Location
    Melbourne, VIC
  • ISSN
    1097-2137
  • Print_ISBN
    978-1-4673-3047-3
  • Type

    conf

  • DOI
    10.1109/COMMAD.2012.6472421
  • Filename
    6472421
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=599905