Title :
Plasma annealing as an effective method for the crystallization of bismuth iron garnet films
Author :
Sharda, Ramesh ; Jeffery, R.D. ; Martyniuk, M. ; Woodward, R.C. ; Dell, J.M. ; Faraone, L.
Author_Institution :
Sch. of Electr., Electron. & Comput. Eng., Univ. of Western Australia, Crawley, WA, Australia
Abstract :
Oxygen plasma annealing was used to crystallise (BiDy)3(FeGa)5O12 (Bi:DyIG) at a temperature of 515°C, which is over 100°C lower compared with conventional thermal annealing. We used a thermal imager to measure and characterise the temperature of the sample with respect to RF power and pressure inside a plasma chamber.
Keywords :
annealing; bismuth compounds; crystallisation; dysprosium compounds; garnets; iron compounds; plasma deposition; thin films; (BiDy)3(FeGa)5O12; bismuth iron garnet films; conventional thermal annealing; crystallization; plasma annealing; plasma chamber; radiofrequency power; temperature 515 degC; Annealing; Conductors; Ovens; Plasma temperature; Radio frequency; Temperature measurement;
Conference_Titel :
Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on
Conference_Location :
Melbourne, VIC
Print_ISBN :
978-1-4673-3047-3
DOI :
10.1109/COMMAD.2012.6472421
