Mobility spectrum analysis of p-to-n type converted vacancy doped HgCdTe

Author

Kala, Hemendra ; Umana-Membreno, G.A. ; Antoszewski, J. ; Ye, Z.H. ; Hu, W.D. ; Ding, R.J. ; Chen, X.S. ; He, Lifang ; Dell, J.M. ; Faraone, L.

Author_Institution

Sch. of Electr., Electron. & Comput. Eng., Univ. of Western Australia, Crawley, WA, Australia

fYear

2012

fDate

12-14 Dec. 2012

Firstpage

203

Lastpage

204

Abstract

Electron transport in n-type HgCdTe realised by Boron ion-implantation and inductively-coupled-plasma reactive-ion etching (ICP-RIE) of vacancy doped p-type HgCdTe has been investigated by employing variable magnetic field Hall-effect and resistivity measurements, coupled with high resolution mobility spectrum analysis (HR-MSA). Electron mobilities were found to be significantly higher in the ICP-RIE type-converted sample than in the ion-implanted sample, suggesting that type-conversion mechanisms in the two samples are significantly different.

Keywords

Hall mobility; II-VI semiconductors; boron; cadmium compounds; electron mobility; ion implantation; magnetoresistance; mercury compounds; semiconductor epitaxial layers; spectrochemical analysis; sputter etching; vacancies (crystal); HgCdTe:B; boron ion implantation; electron mobility; electron transport; high resolution mobility spectrum analysis; inductively-coupled plasma reactive-ion etching; magnetic field Hall effect; p-to-n type converted vacancy; resistivity measurements; Boron; Electron mobility; Fabrication; Magnetic fields; Photodiodes; Plasmas; Spectral analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference on

Conference_Location

Melbourne, VIC

ISSN

1097-2137

Print_ISBN

978-1-4673-3047-3

Type

conf

DOI

10.1109/COMMAD.2012.6472431

Filename

6472431