Corner and short-channel effects in recessed channel dopant segregated Schottky barrier MOSFETs

This work numerically examines the corner and short-channel effects in dopant segregated Schottky barrier MOSFETs (DS-SBMOS) with recessed channel. The recessed channel suppresses effectively the short-channel effect in the DS-SBMOS devices, whereas the recessed channel and oxide corners leads to a lower on-state current and worse on-off switching. The recessed depth plays the key role to optimize the on-current and subthreshold swing in the recessed channel DS-SBMOS.